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APTM50HM65FTG
Full - Bridge MOSFET Power Module
VBUS Q1 Q3
VDSS = 500V RDSon = 65m typ @ Tj = 25C ID = 51A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies
G1 S1 Q2 OUT1 OUT2 Q4
G3 S3
G2 S2 NTC1 0/VBU S NTC2
G4 S4
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Max ratings 500 51 38 204 30 78 390 51 50 3000 Unit V A V m W A mJ
G3 S3
G4 S4
OUT2
VBUS
0/VBUS
OUT1
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM50HM65FTG - Rev 2
July, 2006
Tc = 25C
APTM50HM65FTG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Typ
Tj = 25C Tj = 125C 65 3
VGS = 10V, ID = 25.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
Max 100 500 78 5 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 51A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 51A R G = 3 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 51A, R G = 3 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 51A, R G = 3
Min
Typ 7000 1400 90 140 40 70 21 38 75 93 1035 845 1556 1013
Max
Unit pF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ
VGS = 0V, IS = - 51A IS = - 51A VR = 333V diS/dt = 100A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 2.6 9.6
Max 51 38 1.3 15 270 540
Unit A V V/ns ns C
July, 2006 2-6 APTM50HM65FTG - Rev 2
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 51A di/dt 700A/s VR VDSS Tj 150C
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APTM50HM65FTG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.32 150 125 100 4.7 160
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3-6
APTM50HM65FTG - Rev 2
July, 2006
APTM50HM65FTG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0.0001 0.001 0.9 0.7 0.5
Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 200 ID, Drain Current (A) 160 120 80 40
5.5V VGS=10&15V 7V 6.5V 6V 5V
150 ID, Drain Current (A)
8V
Transfert Characteristics
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
125 100 75 50 25 0
TJ=25C
TJ=125C
TJ=-55C
0 0
5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current
25
0
2
4
6
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 60 ID, DC Drain Current (A) 60
RDS(on) Drain to Source ON Resistance
1.1
1.05
Normalized to VGS =10V @ 25.5A VGS=10V
50 40 30 20 10 0
1
VGS=20V
0.95
0.9 0 10 20 30 40 50 ID, Drain Current (A)
25
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4-6
APTM50HM65FTG - Rev 2
July, 2006
50 75 100 125 TC, Case Temperature (C)
150
APTM50HM65FTG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss 1000 Crss 1000 I D, Drain Current (A)
limited by RDSon
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID= 25.5A
100
100 us
10 Single pulse TJ =150C TC=25C 1
1 ms 10 ms
1
100 ms
0.1 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 Gate Charge (nC)
July, 2006
VDS=400V
ID=51A TJ=25C
VDS=100V VDS=250V
10000
100
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
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5-6
APTM50HM65FTG - Rev 2
APTM50HM65FTG
Delay Times vs Current 80 70 td(on) and t d(off) (ns) 60 50 40 30 20 10 10 20 30 40 50 60 I D, Drain Current (A) 70 80
V DS=333V RG =3 T J=125C L=100H td(off)
Rise and Fall times vs Current 160 140 120 t r and tf (ns) 100 80 60 40 20 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80
VDS=333V RG=3 T J=125C L=100H
tf
tr
td(on)
Switching Energy vs Current 3 Switching Energy (mJ) 2.5 2 1.5 1 0.5 0 10 20 30 40 50 60 70 80 I D, Drain Current (A) Operating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 10 15 20 25 30 35 I D, Drain Current (A) 40 45
hard switching ZCS ZVS VDS=333V D=50% RG=3 TJ=125C TC=75C
Switching Energy vs Gate Resistance 5
V DS =333V ID=51A T J=125C L=100H
Eon
Switching Energy (mJ)
VDS=333V RG=3 TJ=125C L=100H
4 3 2 1 0 0
Eoff
Eon
Eoff
Eoff
5
10 15 20 25 30 35 40 45 Gate Resistance (Ohms)
I DR, Reverse Drain Current (A)
450
Source to Drain Diode Forward Voltage 1000
100
T J=150C TJ=25C
10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, Source to Drain Voltage (V)
July, 2006 6-6 APTM50HM65FTG - Rev 2
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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